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Preparation, electrical and optical properties of evaporated thin films of CuPbI(sub 3)

机译:CupbI(sub 3)蒸发薄膜的制备,电学和光学性质

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Thin films of CuPbl(sub 3) have been prepared by a vacuum evaporation process. X-ray analysis gives structural parameters in consonance with the bulk powder form of the material. The film however preferring a growth in the (002) direction. Electrical conductivity indicates an activated process with two activation energies being 0.45 eV for T (<=) 373 K, and 0.6 eV for T (>=) 373 K. Both are interpreted to be due to the transport of anionic carriers in the phases existing below and beyond 373 K respectively. Optical characterization reveals a material with high absorption coefficient, with (alpha) (>=) 10(sup 4) cm(sup -1). The material is characterized by a direct absorption with the direct edge at 1.64 eV. (author). 13 refs, 5 figs. (Atomindex citation 27:021794)

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