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Effect of weak reductant on properties of electroless copper polyacrylonitrile nanocomposites for electromagnetic interference shielding

机译:弱还原剂对化学屏蔽聚丙烯腈纳米铜复合材料性能的影响

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In this work, the electroless copper method with different reductant compositions (NaHSO_3/Na_2 S_2O _3·5H_2O and Na_2S_2O _3·5H_2O) without sensitizing and activating, was used to deposit copper-sulfide deposition on the polyacrylonitrile (PAN) surface for electromagnetic interference (EMI) shielding materials. The weak reductant, NaHSO_3, in the electroless copper method was used to control the phase of copper-sulfide deposition. The Cu_(x(x=1-1.8))S was deposited on the PAN (Cu_xS-PAN) by reductant composition (NaHSO _3/Na_2S_2O_3·5H_2O) and the Cu_(x(x=1-1.8))S deposition of Cu_xS-PAN possesses three kinds of coppersulfide phases (CuS, Cu_(1.75)S and Cu _(1.8)S). However, the electrolesscopper with reductant was only Na _2S_2O_3·5H_2O (without weak reductant, NaHSO_3), the hexagonal CuS deposition was plated on the PAN (CuS-PAN) and increased the EMI shielding effectiveness of CuS-PAN composites about 10-15 dB. In this study, the best EMI SE of CuS-PAN and Cu _xS-PAN composites were about 27-30 dB and 15-17 dB respectively, as the cupric ion concentration was 0.24 M. The volume resistivity of CuS-PAN composite was about 1000 times lower than that of Cu_xS-PAN composite and lowest volume resistivity of CuS-PAN composites was 0.012 ω cm, as the cupric ion concentration was 0.24 M.
机译:在这项工作中,使用具有不同还原剂组成(NaHSO_3 / Na_2 S_2O _3·5H_2O和Na_2S_2O _3·5H_2O)的化学还原方法而不进行敏化和活化处理,以将硫化铜沉积在聚丙烯腈(PAN)表面上以产生电磁干扰( EMI)屏蔽材料。化学镀铜方法中的弱还原剂NaHSO_3用于控制硫化铜的沉积阶段。 Cu_(x(x = 1-1.8))S通过还原剂组成(NaHSO _3 / Na_2S_2O_3·5H_2O)和Cu_(x(x = 1-1.8))S沉积在PAN(Cu_xS-PAN)上Cu_xS-PAN具有三种硫化铜相(CuS,Cu_(1.75)S和Cu_(1.8)S)。然而,具有还原剂的化学镀铜仅为Na _2S_2O_3·5H_2O(无弱还原剂,NaHSO_3),六角形的CuS沉积物沉积在PAN(CuS-PAN)上,并提高了CuS-PAN复合材料的EMI屏蔽效果约10-15 dB 。在这项研究中,当铜离子浓度为0.24 M时,CuS-PAN和Cu _xS-PAN复合材料的最佳EMI SE分别约为27-30 dB和15-17dB。CuS-PAN复合材料的体积电阻率为当铜离子浓度为0.24 M时,比Cu_xS-PAN复合材料低1000倍,CuS-PAN复合材料的最低体积电阻率为0.012ωcm。

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