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New Freezing Material Unveiled for 22-nm Node Semiconductors

机译:针对22nm节点半导体推出的新型冷冻材料

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JSR Corp. has created an innovative lithographic material that opens the door to the formation of semiconductor circuits in the 22-nanometer technology node, which is the next milestone for semiconductor fabrication following the 32-nanometer node with half-pitch of 32 nanometers. The Tokyo-based company reported that it had achieved 32-nanometer line and space patterns for 22-nanometer node semiconductor devices by using a new "freezing material" for double patterning. According to JSR, double patterning, such as double exposure/double etch or double exposure/single etch, are promising methods for processes at the 22-nanometer technology node.
机译:JSR Corp.开发了一种创新的光刻材料,为22纳米技术节点中的半导体电路的形成打开了大门,这是继32纳米节点(半节距为32纳米)之后半导体制造的下一个里程碑。这家总部位于东京的公司报告说,通过使用一种新型的“冻结材料”进行双重图案化,它已经为22纳米节点半导体器件实现了32纳米线和空间图案。据JSR称,双重图案化,例如两次曝光/两次蚀刻或两次曝光/单次蚀刻,是用于22纳米技术节点的有前途的方法。

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