Process-structure-property relations of micron thick Gd _2O _3 films deposited by reactive electron-beam physical vapor deposition (EB-PVD)

摘要

Thick polycrystalline gadolinium oxide (Gd _2O _3) films up to 11μm in thickness were deposited via reactive electron beam-physical vapor deposition (EB-PVD) on silicon (111) substrates for use in neutron radiation detection. The effects of coating thickness, substrate temperature, and oxygen flow on film structural, electrical and optical properties were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), transmission electron microscopy (TEM), capacitance-voltage (C-V) measurements, and ultraviolet-visible (UV-Vis) spectroscopy. Films were characterized as either monoclinic or mixed monoclinic and cubic phase depending on deposition parameters. Increasing the deposition temperature resulted in increased film crystallinity and cubic phase volume while decreasing the O _2 flow rate resulted in increased volume of the monoclinic phase. Evidence of a thickness dependent crystallography is also presented. Electrical property measurements showed thin film dielectric constant could be tailored between 12 and 20 at 1MHz frequency by decreasing the oxygen flow rate at deposition temperatures of 250°C which is attributed to an increased presence of the monoclinic phase and increased film density. Band gap values were calculated from transmission measurements and ranged between 5.44 and 5.96eV.