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首页> 外文期刊>The journal of physical chemistry, C. Nanomaterials and interfaces >Band Gap Bowing at Nanoscale: Investigation of CdS_xSe_(1-x) Alloy Quantum Dots through Cyclic Voltammetry and Density Functional Theory
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Band Gap Bowing at Nanoscale: Investigation of CdS_xSe_(1-x) Alloy Quantum Dots through Cyclic Voltammetry and Density Functional Theory

机译:纳米级带隙弯曲:通过循环伏安法和密度泛函理论研究CdS_xSe_(1-x)合金量子点

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摘要

The band gap bowing effect in oleic acid-stabilized CdS_xSe_(1-x) alloy quantum dots (Qjdots) with varying composition has been studied experimentally by means of cyclic voltammetry and theoretically using density functional theory based calculations. Distinct cathodic and anodic peaks observed in the cyclic voltammograms of diffusing quantum dots alloy are attributed to the respective conduction and valence band edges. The quasi-particle gap values determined from voltammetric measurements are compared with interband transition peaks in UV—vis and PL spectra. Electronic structure for alloy Q;dots is determined computationally with projector augmented wave method for a particular size of dots. The band gap bowing is observed predominantly in the conduction band states. The bowing parameter determined experimentally (0.45 eV) has been found to be in good agreement with the one estimated from DFT (0,43 eV).
机译:通过循环伏安法和基于密度泛函理论的计算理论研究了组成变化的油酸稳定的CdS_xSe_(1-x)合金量子点(Qjdots)中的带隙弯曲效应。在扩散量子点合金的循环伏安图中观察到的明显的阴极和阳极峰分别归因于各自的导带和价带边缘。将通过伏安测量确定的准粒子间隙值与UV-vis和PL光谱中的带间跃迁峰进行比较。合金Q点的电子结构是使用投影机增强波方法针对特定大小的点计算确定的。带隙弯曲主要在导带状态下观察到。实验确定的弯曲参数(0.45 eV)与根据DFT估算的弯曲参数(0.43 eV)非常吻合。

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