We present an electrochemical route for the integration of graphene with light-sensitive copper-based alloys used in optoelectronic applications. Graphene grown using chemical vapor deposition (CVD) transferred to glass is found to be a robust substrate on which photoconductive Cu_xS films of 1-2 μm thickness can be deposited. The effect of growth parameters on the morphology and photoconductivity of Cu_xS films is presented. Current-voltage (I- V) characterization and photoconductivity decay experiments are performed with graphene as one contact and silver epoxy as the other.
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