首页> 外文期刊>The journal of physical chemistry, B. Condensed matter, materials, surfaces, interfaces & biophysical >Preparation and characterization of tungsten carbide confined in the channels of SBA-15 mesoporous silica
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Preparation and characterization of tungsten carbide confined in the channels of SBA-15 mesoporous silica

机译:限制在SBA-15介孔二氧化硅通道中的碳化钨的制备与表征

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摘要

A series of WO3/SBA-15 materials with different Si/W ratios have been prepared by impregnating the host material SBA-15 with aqueous ammonium paratungstate solutions. After temperature-programmed carburization (TPC) in flowing CH4/H-2 (20/80 v/v mixture), the materials are converted to the corresponding W2C/SBA-15 species. Both the oxide and carbide materials are characterized using X-ray diffraction, nitrogen adsorption-desorption, Si-29 NMR spectroscopy, Fourier transform infrared (FTIR) spectroscopy, and TEM measurements. The XRD results show that after impregnation with different amounts of tungsten and subsequent carburization, the materials retain the mesopore structure of SBA-15. The nitrogen adsorption-desorption results indicate that a thin layer of W2C covers the internal walls of SBA-15. Quantitative Si-29 single-pulse excitation MAS experiments and FTIR spectroscopy show that the incorporation of W2C in the channels of SBA-15 is correlated with the formation of Si-O-W bonds. Some Si-O-W bonds are transformed into Si-O-H bonds after carburization. The TEM results show that the thickness of the W2C thin layer is 1.7-1.9 nm in W2C/SBA-15. A model involving a discrete W2C thin layer in the channels of SBA-15 is proposed on the basis of the NMR data. The calculated thickness of the discrete W2C thin layer is consistent with value given by HRTEM.
机译:通过用仲钨酸铵水溶液浸渍主体材料SBA-15,制备了一系列具有不同Si / W比的WO3 / SBA-15材料。在流动的CH4 / H-2(20/80 v / v混合物)中进行程序升温渗碳(TPC)后,将材料转换为相应的W2C / SBA-15物种。使用X射线衍射,氮吸附-解吸,Si-29 NMR光谱,傅立叶变换红外(FTIR)光谱和TEM测量来表征氧化物和碳化物材料。 XRD结果表明,在用不同量的钨浸渍和随后的渗碳之后,材料保留了SBA-15的中孔结构。氮吸附-解吸结果表明,W2C的薄层覆盖了SBA-15的内壁。 Si-29单脉冲激发MAS定量实验和FTIR光谱表明,SBA-15通道中W2C的掺入与Si-O-W键的形成有关。渗碳后,某些Si-O-W键转变为Si-O-H键。 TEM结果表明,在W2C / SBA-15中,W2C薄层的厚度为1.7-1.9nm。基于核磁共振数据,提出了一种在SBA-15通道中包含离散W2C薄层的模型。离散W2C薄层的计算厚度与HRTEM给出的值一致。

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