首页> 外文期刊>The journal of physical chemistry, B. Condensed matter, materials, surfaces, interfaces & biophysical >True Nanocable Assemblies with Insulating BN Nanotube Sheaths and Conducting Cu Nanowire Cores
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True Nanocable Assemblies with Insulating BN Nanotube Sheaths and Conducting Cu Nanowire Cores

机译:具有绝缘BN纳米管护套和导电Cu纳米线芯的真正的纳米电缆组件

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Nanocable models comprised of BN nanotubes filled with close-packed Cu nanowires were investigated by gradient-corrected density functional theory(DFT)computations.The optimal distance between the sidewall of BN nanotubes and the atoms in a copper nanowire is about 0.35 nm,with a weak insertion energy(ca.-0.04 eV per Cu atom).Hence,such nanocables are assembled by weaker van der Waals(vdW)forces,rather than by chemical bonding interactions.The electronic band structures of the BN/Cu hybrid systems are superposition of those of the separate components,the BN nanotubes,and the Cu nanowires.Since charge density analyses show that the conduction electrons are distributed only on the copper atoms,charge transport will occur only in these inner nanowires,which are effectively insulated by the outer BN nanotubes.On the basis of these computational results,BN/Cu hybrid structures should be ideal nanocables.
机译:通过梯度校正密度泛函理论(DFT)计算研究了由密堆积Cu纳米线填充的BN纳米管组成的纳米电缆模型。BN纳米管的侧壁与铜纳米线中原子之间的最佳距离约为0.35 nm,且弱的插入能量(每Cu原子约-0.04 eV)。因此,此类纳米电缆是通过较弱的范德华力(vdW)而不是通过化学键相互作用来组装的.BN / Cu杂化体系的电子能带结构是叠加的由于电荷密度分析表明,传导电子仅分布在铜原子上,因此电荷传输仅发生在这些内部纳米线中,而这些内部纳米线被外部绝缘有效地隔离了。根据这些计算结果,BN / Cu杂化结构应该是理想的纳米电缆。

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