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首页> 外文期刊>The journal of physical chemistry, B. Condensed matter, materials, surfaces, interfaces & biophysical >Characterization of Amorphous Hydrogenated Carbon Formed by Low-Pressure Inductively Coupled Plasma Enhanced Chemical Vapor Deposition Using Multiple Low-Inductance Antenna Units
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Characterization of Amorphous Hydrogenated Carbon Formed by Low-Pressure Inductively Coupled Plasma Enhanced Chemical Vapor Deposition Using Multiple Low-Inductance Antenna Units

机译:低压感应耦合等离子体增强化学气相沉积使用多个低电感天线单元形成的非晶氢化碳的表征

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Three-dimensional plasma enhanced chemical vapor deposition (CVD) of hydrogenated amorphous carbon (a-C:H) has been demonstrated using a new type high-density volumetric plasma source with multiple low-inductance antenna system.The plasma density in the volume of phi 200 mm x 100 mm is 5.1 x 10~(10) cm~(-3) within +-5% in the lateral directions and 5.2 x 10~(10)cm~(-3) within +-10% in the axial direction for argon plasma under the pressure of 0.1 Pa and the total power as low as 400 W.The uniformity of the thickness and refractive index is within +-3.5% and +-1%,respectively,for the a-C:H films deposited on the substrates placed on the six side walls,the top of the phi60 mm x 80 mm hexagonal substrate holder in the pure toluene plasma under the pressure is as low as 0.04 Pa,and the total power is as low as 300 W.It is also found that precisely controlled ion bombardment by pulse biasing led to the explicit observation in Raman and IR spectra of the transition from polymer-like structure to diamond-like structure accompanied by dehydrogenation due to ion bombardment.Moreover,it is also concluded that the pulse biasing technique is effective for stress reduction without a significant degradation of hardness.The stress of 0.6 GPa and the hardness of 15 GPa have been obtained for 2.0mum thick films deposited with the optimized deposition conditions.The films are durable for the tribology test with a high load of 20 N up to more than 20 000 cycles,showing the specific wear rate and the friction coefficient were 1.2 x 10~(-7) mm~3/Nm and 0.04,respectively.
机译:已使用具有多个低电感天线系统的新型高密度体积等离子体源证明了氢化非晶碳(aC:H)的三维等离子体增强化学气相沉积(CVD).phi 200体积中的等离子体密度毫米x 100毫米是在横向+ -5%内为5.1 x 10〜(10)cm〜(-3)在轴向上是5.2 x 10〜(10)cm〜(-3)在轴向上对于在0.1 Pa压力下且总功率低至400 W的氩气等离子体,厚度和折射率的均匀性分别在沉积在玻璃上的aC:H薄膜范围内为+ -3.5%和+ -1%基板放置在六个侧壁上,纯甲苯等离子体中phi60 mm x 80 mm六角形基板支架的顶部在压力下低至0.04 Pa,总功率低至300W。通过脉冲偏压精确控制离子轰击导致在拉曼光谱和红外光谱中可以清楚地观察到类似聚合物结构的转变由于离子轰击导致金刚石结构伴有脱氢作用。此外,还得出结论,脉冲偏压技术可有效地降低应力,而不会显着降低硬度。0.6GPa的应力和15 GPa的硬度已达到在最优化的沉积条件下沉积了厚度为2.0μm的薄膜,该薄膜经20 N的高负载承受了长达20,000次的摩擦测试,经久耐用,显示出比磨损率和摩擦系数为1.2 x 10〜 (-7)mm〜3 / Nm和0.04。

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