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Coalescence of silver clusters by immersion in diluted HF solution

机译:通过浸入稀释的HF溶液中使银团聚结

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The galvanic displacement deposition of silver on H-terminated Si (100) in the time scale of seconds is instantaneous and characterized by a cluster density of 10(11)-10(12) cm(-2). The amount of deposited Ag follows a t(1/2) dependence in agreement with a Cottrell diffusion limited mechanism. At the same time, during the deposition, the cluster density reduces by a factor 5. This behavior is in contrast with the assumption of immobile clusters. We show in the present work that coalescence and aggregation occur also in the samples immersed in the diluted hydrofluoric acid (HF) solution without the presence of Ag+. Clusters agglomerate according to a process of dynamic coalescence, typical of colloids, followed by atomic redistribution at the contact regions with the generation of multiple internal twins and stacking-faults. The normalized size distributions in terms of r/r(mean) follow also the prediction of the Smoluchowski ripening mechanism. No variation of the cluster density occurs for samples immersed in pure H2O solution. The different behavior might be associated to the strong attraction of clusters to oxide-terminated Si surface in presence of water. The silver clusters are instead weakly bound to hydrophobic H-terminated Si in presence of HF. HF causes then the detachment of clusters and a random movement on the silicon surface with mobility of about 10(-13) cm(2)/s. Attractive interaction (probably van der Waals) among particles promotes coarsening. (C) 2015 AIP Publishing LLC.
机译:银在H终止的Si(100)上以秒为单位的电位移沉积是瞬时的,其特征是簇密度为10(11)-10(12)cm(-2)。 Ag的沉积量遵循与Cottrell扩散受限机制一致的t(1/2)依赖性。同时,在沉积过程中,团簇密度降低了5倍。该行为与不动团簇的假设相反。我们在当前的工作中表明,浸没在没有Ag +的稀氢氟酸(HF)溶液中的样品中也会发生聚结和聚集。团簇根据典型的胶体动态聚结过程聚集成团,随后在接触区域发生原子重新分布,并产生多个内部孪晶和堆垛层错。以r / r(平均值)表示的归一化大小分布也遵循Smoluchowski成熟机制的预测。对于浸在纯H2O溶液中的样品,簇密度没有变化。不同的行为可能与水存在下团簇对氧化物封端的硅表面的强烈吸引有关。相反,在HF的存在下,银团簇弱地结合到疏水的H-末端的Si上。然后,HF导致簇的脱离和在硅表面上的随机运动,其迁移率约为10(-13)cm(2)/ s。颗粒之间的有吸引力的相互作用(可能是范德华力)促进了粗化。 (C)2015 AIP Publishing LLC。

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