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Method to etch cu/Ta/TaN selectively using dilute aqueous Hf/hCl solution
Method to etch cu/Ta/TaN selectively using dilute aqueous Hf/hCl solution
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机译:使用稀Hf / hCl水溶液选择性刻蚀cu / Ta / TaN的方法
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摘要
Copper can be etched with selectivity to Ta/TaN barrier liner and SiC hardmask layers, for example, to reduce the potential copper contamination. The copper film can be recessed more than the liner to further enhance the protection. Wet etch solutions including a mixture of HF and HCl can be used for selective etching copper with respect to the liner material, for example, the copper film can be recessed between 2 and 3 nm, and the barrier liner film can be recessed between 1.5 and 2 nm.
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