REMOVAL OF Cu FROM Si WAFER SURFACES USING DILUTE HF-HCl SOLUTIONS

摘要

The deposition of Cu from dilute HF mixtures, and its effect on silicon surface microroughening is examined. The effect of adding small amounts of HCl to such a dilute HF mixture, is also examined. It is shown that the addition of HCl in fact supresses the deposition of Cu from solution onto the wafer surface, without causing any additional microroughening, thus making a dilute HF-HCl based cleaning process a viable one.