首页> 外文期刊>The Journal of Chemical Physics >Adsorption and dissociation of oxygen molecules on Si(111)-(7×7) surface
【24h】

Adsorption and dissociation of oxygen molecules on Si(111)-(7×7) surface

机译:氧分子在Si(111)-(7×7)表面上的吸附和解离

获取原文
获取原文并翻译 | 示例
           

摘要

The adsorption and dissociation of O_2 molecules on Si(111)-(7×7) surface have been studied by first-principles calculations. Our results show that all the O_2 molecular species adsorbed on Si(111)-(7×7) surface are unstable and dissociate into atomic species with a small energy barrier about 0.1 eV. The single O_2 molecule adsorption tends to form an ins×2 or a new metastable ins×2* structure on the Si adatom sites and the further coming O_2 molecules adsorb on those structures to produce an ad-ins×3 structure. The ad-ins×3 structure is indeed highly stable and kinetically limited for diving into the subsurface layer to form the ins×3-tri structure by a large barrier of 1.3 eV. Unlike the previous views, we find that all the ad-ins, ins×2, and ad-ins×3 structures show bright images, while the ins×2*, ins×3, and ins×3-tri structures show dark images. The proposed oxidation pathways and simulated scanning tunneling microscope images account well for the experimental results and resolve the long-standing confusion and issue about the adsorption and reaction of O _2 molecules on Si(111) surface.
机译:通过第一性原理研究了O_2分子在Si(111)-(7×7)表面的吸附和解离。我们的结果表明,所有吸附在Si(111)-(7×7)表面上的O_2分子种类都是不稳定的,并解离为具有约0.1 eV的小能垒的原子种类。单个O_2分子的吸附趋向于在Si吸附原子位点上形成ins×2或新的亚稳ins×2 *结构,进一步的O_2分子吸附在那些结构上,从而生成ad-ins×3结构。 ad-ins×3结构确实是高度稳定的,并且在动力学上受到限制,无法通过1.3 eV的大势垒进入地下层以形成ins×3-tri结构。与以前的视图不同,我们发现所有ad-ins,ins×2和ad-ins×3结构均显示明亮的图像,而ins×2 *,ins×3和ins×3-tri结构均显示黑暗的图像。所提出的氧化途径和模拟扫描隧道显微镜图像很好地说明了实验结果,解决了长期以来的困惑以及关于O _2分子在Si(111)表面上的吸附和反应的问题。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号