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Adsorption of atomic and molecular oxygen on 3C-SiC(111) and ((111)) surfaces: A first-principles study

机译:原子和分子氧在3C-SiC(111)和((111))表面上的吸附:第一性原理研究

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Density-functional theory calculations were performed to investigate the adsorption of oxygen on 3C-SiC (111) and ((111)) surfaces, including single O atom, double O atoms, and variable oxygen coverage adsorptions. We find that the bridge (BR) and on-top (OT) sites are the most stable adsorption sites for the (111) and ((111)) surfaces, respectively. According to the two-dimensional potential energy surface achieved, the lowest continuous oxygen diffusion path over the whole surface seems to be BR→H3→BR→BR(neighbor)→etc. By studying the double O atoms adsorption on 3C-SiC(111) surface, we find that 2-BR is the most favorable configuration. By comparing adsorption energies and O-O distances with reference values, we get that there is an electronic induction effect, which helps to get a more stable adsorption structure, between neighboring O adatoms with small amount of negative charge, which favors a medium 0-0 distance. Spin-unrestricted firstprinciples molecular-dynamics calculations have been carried out to achieve more dynamic information and comprehensive understanding of the molecular oxygen adsorption on a 3C-SiC(111) surface. The results confirm our determined diffusion path and one of the preferred double atoms configuration. By studying the adsorption of oxygen at 3C-SiC(111) and ((111)) surfaces as a function of oxygen coverage, we find that the adsorption energy initially increases [1/93/9 monolayer (ML)] then significantly decreases (3/9-679 ML) with increasing oxygen coverage and finally reaches a stable value (7/9-1.0 ML) for 3CSiC(111) surface. For 3C-SiC((111)) surface, the trend is similar to the (111) surface case; however the variation is small when the oxygen coverage is above 3/9 ML and the adsorption energy at 1/9 ML coverage is lower. By combining the results of adsorption energy, structure evolution, and electronic-density difference calculations, we get that the total adsorption energy is determined by the interaction between adatoms and surface reconstructions: attractive (respectively, repulsive) interactions between adatoms make the adsorption structure more (respectively, less) stable, i.e., it gets a larger (respectively, smaller) adsorption energy; however, surface reconstructions can eliminate the stress caused by repulsive interactions between adatoms and make the adsorption structure to be stable.
机译:进行密度泛函理论计算以研究氧在3C-SiC(111)和((111))表面上的吸附,包括单O原子,双O原子和可变的氧覆盖率吸附。我们发现,桥(BR)和顶置(OT)部位分别是(111)和((111))表面最稳定的吸附部位。根据所获得的二维势能面,整个表面上最低的连续氧扩散路径似乎是BR→H3→BR→BR(邻居)→等。通过研究3C-SiC(111)表面双O原子的吸附,我们发现2-BR是最有利的构型。通过将吸附能和OO距离与参考值进行比较,我们得到具有负电荷的相邻O原子之间存在电子感应效应,这有助于获得更稳定的吸附结构,这有利于0-0中等距离。进行了自旋无限制的第一性原理分子动力学计算,以获取更多的动态信息并全面理解3C-SiC(111)表面上分子氧的吸附。结果证实了我们确定的扩散路径和优选的双原子构型之一。通过研究氧气在3C-SiC(111)和((111))表面的吸附随氧气覆盖率的变化,我们发现吸附能最初增加[1/93/9单层(ML)],然后显着降低( 3 / 9-679 ML)随着氧气覆盖率的增加而最终达到3CSiC(111)表面的稳定值(7 / 9-1.0 ML)。对于3C-SiC((111))表面,趋势类似于(111)表面情况;然而,当氧气覆盖率高于3/9 ML时变化很小,而在1/9 ML覆盖率下的吸附能较低。通过结合吸附能,结构演化和电子密度差计算的结果,我们得出总吸附能由吸附原子与表面重建之间的相互作用决定:吸附原子之间的吸引(分别为排斥)相互作用使吸附结构更紧密(分别较小)稳定,即获得较大(分别较小)的吸附能;然而,表面重建可以消除由原子之间的排斥相互作用引起的应力,并使吸附结构稳定。

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