The photoluminescence in amorphous semiconductors decays according to the power law t~(-delta) at long times.The photoluminescence is controlled by dispersive transport of electrons.The latter is usually characterized by the power alpha of the transient current observed in the time-of-flight experiments.Geminate recombination occurs by radiative tunneling which has a distance dependence.In this paper,we formulate ways to calculate reaction rates and survival probabilities in the case carriers execute dispersive diffusion with long-range reactivity.The method is applied to obtain tunneling recombination rates under dispersive diffusion.The theoretical condition of observing the relation delta= alpha/2+1 is obtained and theoretical recombination rates are compared to the kinetics of observed photoluminescence decay in the whole time range measured.
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