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The calculation of ~(13)C chemical shielding tensors in ionic compounds utilizing point charge arrays obtained from Ewald lattice sums

机译:利用从Ewald晶格和获得的点电荷阵列计算离子化合物中的〜(13)C化学屏蔽张量

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An embedded ion method is proposed for accurately calculating the ‘3C chemical shift tensors in ionic compounds. The method models an ionic crystal by embedding an ion of interest inside an array of point charges. The potential. produced by an infinite ionic lattice, at the location of the ion of interest can be simulated accurately utilizing a point charge array obtained by the Ewald summation method. The Ewald summation method, as implemented in the computer program EWALD, in conjunction with the quantum-mechanics program GAUSSIAN 98 is used to generate a self-consistent point charge array that simulates the Ewald potential in a defined region at the center of the array. Subsequently, the chemical shift tensor calculation is performed using GAUSSIAN 98 on the ion of interest positioned in the region inside the point charge array in which the Ewald potential is established. The embedded ion method was tested on potassium methyl-trithiocarbonate (KS9CSCH3) whose crystal lattice is composed of potassium cations and molecular S2CSCH~ anions. The principal values of the ‘3C chemical shift tensors in KS9CSCH3 were measured in a stationary cross polarization nuclear magnetic resonance experiment. It is shown that the correlation between experimental and calculated principal values improves significantly when the C—H bond distances are optimized from their x-ray values. It is further demonstrated that a substantial improvement in the correlation is obtained when the chemical shielding tensor calculation is performed on an S2CSCH~ anion embedded inside a point charge array obtained by the Ewald summation method. The embedded ion method was completed applying the B3P86Icc-pVTZ, B3LYP/cc-pVTZ, and MP2/cc-pVDZ quantum-mechanical computations and the various results are compared and analyzed.
机译:为了准确计算离子化合物中的3C化学位移张量,提出了一种嵌入式离子方法。该方法通过将目标离子嵌入点电荷阵列中来模拟离子晶体。潜力。利用由Ewald求和方法获得的点电荷阵列,可以精确地模拟由无限离子晶格生成的目标离子所在的位置。在计算机程序EWALD中实现的Ewald求和方法与量子力学程序GAUSSIAN 98结合在一起,用于生成自洽点电荷阵列,该点电荷阵列模拟了阵列中心定义区域中的Ewald势。随后,使用高斯98(Gaussian 98)对位于点电荷阵列内建立Ewald势的区域中的目标离子进行化学位移张量计算。在晶格由钾阳离子和分子S2CSCH〜阴离子组成的甲基三硫代碳酸钾(KS9CSCH3)上测试了嵌入式离子法。在固定交叉极化核磁共振实验中测量了KS9CSCH3中3C化学位移张量的主值。结果表明,当从它们的X射线值优化CH键距离时,实验值和计算值之间的相关性显着提高。进一步证明,当对通过Ewald求和方法获得的嵌入在点电荷阵列中的S2CSCH〜阴离子进行化学屏蔽张量计算时,可以显着改善相关性。使用B3P86Icc-pVTZ,B3LYP / cc-pVTZ和MP2 / cc-pVDZ量子力学计算完成了嵌入式离子方法,并对各种结果进行了比较和分析。

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