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Numerical solutions of sheath structures in front of an electron-emitting electrode immersed in a low-density plasma

机译:浸没在低密度等离子体中的电子发射电极前面的鞘结构的数值解

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The exact theoretical expressions involved in the formation of sheath in front of an electron emitting electrode immersed in a low-density plasma have been derived. The potential profile in the sheath region has been calculated for subcritical, critical, and supercritical emissions. The potential profiles of critical and supercritical emissions reveals that we must take into account a small, instead of zero, electric field at the sheath edge to satisfy the boundary conditions used to integrate the Poisson's equation. The I-V curves for critical emission shows that only high values of plasma-electron to emitted-electron temperature ratio can meet the floating potential of the emissive electrode. A one-dimensional fluid like model is assumed for ions, while the electron species are treated as kinetic. The distribution of emitted-electron from the electrode is assumed to be half Maxwellian. The plasma-electron enters the sheath region at sheath edge with half Maxwellian velocity distribution, while the reflected ones have cut-off velocity distribution due to the absorption of super thermal electrons by the electrode. The effect of varying emitted-electron current on the sheath structure has been studied with the help of a parameter G (the ratio of emitted-electron to plasma-electron densities).
机译:推导了在浸没在低密度等离子体中的电子发射电极前面形成鞘层的确切理论表达式。对于次临界,临界和超临界排放,已计算出护套区域的电势分布。临界和超临界排放的势能曲线表明,我们必须考虑鞘缘处的小而不是零电场,以满足用于积分泊松方程的边界条件。临界发射的I-V曲线表明,只有高等离子电子与发射电子的温度比值才能满足发射电极的浮动电位。假设离子为一维流体模型,而电子物种则视为动力学模型。假定从电极发射的电子的分布是麦克斯韦半数的一半。等离子体电子以麦克斯韦速度分布的一半进入护套边缘,进入护套区域,而反射的电子由于电极吸收超热电子而具有截止速度分布。借助于参数G(发射电子与等离子体电子密度之比),研究了改变发射电子电流对鞘结构的影响。

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