...
首页> 外文期刊>Physical Review, B. Condensed Matter >Insulator-quantum Hall conductor transitions at low magnetic field - art. no. 045303
【24h】

Insulator-quantum Hall conductor transitions at low magnetic field - art. no. 045303

机译:绝缘体-量子霍尔导体在低磁场下的跃迁-艺术没有。 045303

获取原文
获取原文并翻译 | 示例
   

获取外文期刊封面封底 >>

       

摘要

Insulator-quantum Hall conductor transitions at low magnetic field B were studied with a gated GaAs-AlGaAs heterostructure, A low field disorder-magnetic field phase diagram was constructed based on the experimental results. This phase diagram shows no floating up of the extended state and allows transitions from the insulating state directly to any Landau level states. The critical filling factor can change from 16 to 6 as the disorder in the sample increases. By inspecting the raw data from this and the other samples and analyzing the scaling behaviors near the transition points, we found that the observed transition has the properties of a genuine phase transition. [References: 23]
机译:利用门控GaAs-AlGaAs异质结构研究了低磁场B下的绝缘体-量子霍耳导体跃迁,并根据实验结果构建了低场无序-磁场相图。该相图显示了扩展状态没有上浮,并且允许从绝缘状态直接过渡到任何Landau层状态。随着样品中无序度的增加,临界填充因子可以从16变为6。通过检查来自此样本和其他样本的原始数据并分析过渡点附近的缩放行为,我们发现观察到的过渡具有真正的相变特性。 [参考:23]

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号