Surface mass transport and island nucleation during growth of Ge on laser textured Si(001) - art. no. 125317

摘要

Substrates with controlled surface morphologies are used to quantify the kinetics of surface mass transport during Stranski-Krastanov growth of epitaxial nanostructures. Morphologies are modified by laser texturing; tightly focused nanosecond laser pulses are used to produce micron-scale dimples on the surface of Si(001) substrates. The areal densities of three-dimensional Ge islands formed by chemical vapor deposition on these modified substrates is measured by atomic force microscopy for a wide range of Ge coverages (3-10 ML), temperatures (500