Polarization of the interband optical dipole in InAs/GaAs self-organized quantum dots - art. no. 233306

摘要

We present measurements of the optical dipole of interband transitions in InAs/GaAs quantum dots. Both the transmission in guided-wave geometry and the in-plane polarization dependence of the photoluminescence are analyzed. The relative oscillator strength and polarization of up to four optical transitions have been determined, and the electronic structure is discussed, with a focus on the heavy-hole versus light-hole character of valence states. [References: 22]