Nonequilibrium carriers in GaAs grown by low-temperature molecular beam epitaxy - art. no. 085203

摘要

Electronic properties of GaAs grown by low-temperature molecular beam epitaxy are analyzed using a model that assumes a semiconducting matrix with embedded semimetallic As dusters. The static and high-frequency conductivity, Hall effect, lifetime of photoexcited carriers, current-voltage characteristic, and the screening phenomena art: all considered. Model results are compared with existing experimental data and a proposal is given for new experiments that could determine currently unknown properties of the material. [References: 27]