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Raman Study of Defects in a GaAs Buffer Layer Grown by Low-Temperature Molecular Beam Epitaxy.

机译：低温分子束外延生长Gaas缓冲层缺陷的拉曼研究。

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作者
Berg, R. S.; Mavalvala, N.; Steinberg, T.;
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年度 1990
页码 1-9
总页数 9
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Gallium arsenides; Integrated circuits; Crystal structure; Epitaxial growth; Defects(Materials); Fabrication; Reprints; Molecular beam epitaxy; Raman scattering;

机译：砷化镓;集成电路;晶体结构;外延生长;缺陷（材料）;制造;重印;分子束外延;拉曼散射;

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专利

1. Defects in the GaAs and InGaAs layers grown by low-temperature molecular-beam epitaxy [J] . L. G. Lavrentieva, M. D. Vilisova, I. A. Bobrovnikova, Russian physics journal . 2006,第12期

机译：低温分子束外延生长的GaAs和InGaAs层中的缺陷
2. A Comparative Study of Metamorphic InP/lnGaAs Double Heterojunction Bipolar Transistors with InP and InAlP Buffer Layers Grown by Molecular Beam Epitaxy [J] . NATHAN PRESSER, YONGKUN SIN, PAUL ADAMS Journal of Electronic Materials . 2006,第2期

机译：分子束外延生长具有InP和InAlP缓冲层的变质InP / InGaAs双异质结双极晶体管的比较研究
3. Study of the crystal quality and Ga-segregation in ZnSe films grown by molecular beam epitaxy on Al_xGa_1-xAs and In_xGa_1-xAs buffer layers on GaAs substrates [J] . V.H.Mendez-Garcia, M.Lopez-Lopez, A.Lastras-Martinez Journal of Crystal Growth . 2001,第期

机译：在GaAs衬底上通过Al_xGa_1-xAs和In_xGa_1-xAs缓冲层通过分子束外延生长的ZnSe薄膜的晶体质量和Ga偏析的研究
4. A study on the growth of cubic GaN films using an AlGaAs buffer layer grown on GaAs (100) by plasma-assisted molecular beam epitaxy [C] . Ryuhei Kimura, Kiyoshi Takahashi, H. T. Grahn MRS Meeting . 2001

机译：通过等离子体辅助分子束外延生长在GaAs（100）上生长的藻类缓冲层的立方GaN薄膜生长研究
5. Studies of the structural defects in gallium arsenide on silicon grown by molecular beam epitaxy. [D] . Kim, Sam-Dong. 1993

机译：分子束外延生长硅上砷化镓结构缺陷的研究。
6. Deep-level defects in n-type GaAsBi alloys grown by molecular beam epitaxy at low temperature and their influence on optical properties [O] . Łukasz Gelczuk, Jan Kopaczek, Thomas B. O. Rockett, -1

机译：分子束外延在低温下生长的n型GaAsBi合金的深层缺陷及其对光学性能的影响
7. High-resolution electron microscopy and X-ray diffraction characterization of alternately strained (GaAs)n(GaP)m(GaAs)n(InP)m superlattices grown by Atomic Layer Molecular Beam Epitaxy. [O] . Ballesteros Carmen, Gerthsen D., Mazuelas Esteban Ángel José, 2012

机译：原子层分子束外延生长的交替应变（GaAs）n（GaP）m（GaAs）n（InP）m超晶格的高分辨率电子显微镜和X射线衍射表征。
8. InGaAs/AlGaAs Intersubband Transition Structures Grown on InAlAs Buffer Layers on GaAs Substrates by Molecular Beam Epitaxy [R] . Katzer, D. S. , Rabinovich, W. S. , Beadie, G. 2000

机译：通过分子束外延在Gaas衬底上的Inalas缓冲层上生长的InGaas / alGaas子带间跃迁结构

Raman Study of Defects in a GaAs Buffer Layer Grown by Low-Temperature Molecular Beam Epitaxy.

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