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Magneto-quantum-resistance oscillations in tunnel-coupled double quantum wells in tilted magnetic fields: Variable Landau biladders

机译:倾斜磁场中隧道耦合双量子阱中的磁量子电阻振荡:可变的Landau分子

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We present a linear-response theory of magneto-quantum-resistance oscillations of the in-plane resistances R-xx and R-yy in two coupled quasi-two-dimensional electron layers in tilted magnetic fields B=(B-parallel to, B-perpendicular to), and explain recent data from GaAs/Al(x)Gal(1-x)As double quantum wells. In this system, the electrons are in the two tunnel-split ground sublevels. The cyclotron masses of the two orbits on the Fermi surface have opposite dependences on the in-plane field B-parallel to: one increases monotonically, while the other decreases as a function of B-parallel to, in the regime of interest. As a result, the rungs of one Landau ladder sweep up through the Fermi level, while those of the other Landau ladder sweep down when B-parallel to is increased at a fixed perpendicular field B-perpendicular to. Ridges are obtained in the three-dimensional plots of both R-xx and R-yy and the density of states versus (B-parallel to, B-perpendicular to) due to Fermi-level crossing by the rungs of the Landau ladders. Giant peaks are obtained when two ridges intersect each other. The (B-parallel to, B-perpendicular to) dependence of R-xx as well as theoretical evidence of magnetic breakdown yields good agreement with recent data from GaAs/AlxGa1-xAs double quantum wells. [S0163-1829(98)05027-9]. [References: 27]
机译:我们提出了在倾斜磁场中两个耦合的准二维电子层中面内电阻R-xx和R-yy的磁量子电阻振荡的线性响应理论B =(B平行于B -垂直),并解释来自GaAs / Al(x)Gal(1-x)As双量子阱的最新数据。在该系统中,电子位于两个隧道分裂的地平面中。费米表面上两个轨道的回旋加速器质量对与B平行的平面内场有相反的依赖性:在感兴趣的情况下,一个单调增加,而另一个作为B平行的函数减小。结果,当B平行于垂直于B固定的垂直场增加时,一个Landau阶梯的横档向上扫过费米能级,而另一个Landau阶梯的横档向下扫动。在R-xx和R-yy的三维图中获得了山脊,并且由于Landau梯子的梯级穿过费米能级而形成了相对于(B平行,B垂直于)的状态密度。当两个脊相互交叉时,会获得巨大的峰。 R-xx的(B平行,B垂直)依赖性以及磁击穿的理论证据与GaAs / AlxGa1-xAs双量子阱的最新数据相吻合。 [S0163-1829(98)05027-9]。 [参考:27]

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