Spin effects in the n-In_xGa_(1-x)As/GaAs double quantum well magnetoresistance under tilted magnetic fields

摘要

Precise scanning of the (B perpendicular to B parallel to) plane while measuring magnetoresistance of the n-InGaAs/GaAs double quantum well (DQW) reveals a number of peculiarities connected with intricate DQW energy spectrum, which are analyzed on the basis of quasiclassical calculations. Magnetic breakdown effects are also considered. Peaks due to the latter mechanism reveal spin-splittings (in spite of lower mobilities as compared with the traditional n-GaAs/AlGaAs DQWs) corresponding to an enhanced effective Lande g-factor.