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首页> 外文期刊>Physical Review, B. Condensed Matter >Nanoscale mapping of confinement potentials in single semiconductor quantum wires by near-field optical spectroscopy
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Nanoscale mapping of confinement potentials in single semiconductor quantum wires by near-field optical spectroscopy

机译:近场光学光谱法在单根半导体量子线中限制电位的纳米级映射

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摘要

The quasi-one-dimensional confinement potential and its influence on carrier transport in a GaAs quantum wire structure are directly mapped by low-temperature near-field scanning optical spectroscopy with subwavelength spatial resolution. Shallow asymmetric potential barriers in the vicinity of the quantum wire are detected, and their height and width are determined quantitatively: We demonstrate the strong influence of such local barriers on carrier transport and trapping into the quantum wire, suppressing carrier trapping at low temperature. [References: 18]
机译:利用亚波长空间分辨率的低温近场扫描光谱技术直接绘制了准一维约束电位及其对GaAs量子线结构中载流子传输的影响。检测量子线附近的浅不对称势垒,并定量确定其高度和宽度:我们证明了此类局部势垒对载流子传输和俘获进入量子线的强烈影响,从而抑制了低温下的载流子俘获。 [参考:18]

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