Field localization and enhancement of phase-locked second- and third-order harmonic generationin absorbing semiconductor cavities

摘要

We predict and experimentally observe the enhancement by three orders of magnitude of phase mismatchedsecond and third harmonic generation in a GaAs cavity at 650 and 433 nm, respectively, well above theabsorption edge. Phase locking between the pump and the harmonics changes the effective dispersion of themedium and inhibits absorption. Despite hostile conditions the harmonics resonate inside the cavity andbecome amplified leading to relatively large conversion efficiencies. Field localization thus plays a pivotal roledespite the presence of absorption, and ushers in a new class of semiconductor-based devices in the visible anduv ranges.