首页> 外国专利> Vertical cavity surface emitting laser with enhanced second harmonic generation and method of making same

Vertical cavity surface emitting laser with enhanced second harmonic generation and method of making same

机译:具有增强的二次谐波产生的垂直腔表面发射激光器及其制造方法

摘要

A vertical cavity surface emitting laser is constructed on a semiconductor substrate, and includes a second mirror stack disposed on the substrate, a gain region with an active material within the second mirror stack capable of emitting electromagnetic radiation at a fundamental wavelength, a non-linear element disposed above the second mirror stack capable of emitting electromagnetic radiation at a harmonic of the fundamental wavelength in response to the electromagnetic radiation at the fundamental wavelength, and a first mirror stack disposed above the non-linear element. Electrodes are applied to the second mirror stack and the substrate for electrically pumping current into the gain region without passing through the non-linear element. A conducting layer can be disposed in the second mirror stack and an annular current confinement region can be formed in the second mirror stack around the gain region to help guide current into the active material. The gain region within the second mirror stack and the non- linear element are separated by a preselected distance. The first mirror stack is organized to be reflective of electromagnetic radiation at the fundamental wavelength and partially transmissive of electromagnetic radiation at the harmonic of the fundamental wavelength.
机译:垂直腔表面发射激光器构造在半导体衬底上,并且包括设置在衬底上的第二反射镜叠层,在第二反射镜叠层内具有活性材料的增益区域,该活性区域能够发射基本波长的电磁辐射,非线性设置在第二反射镜叠层上方的第一反射镜组件和设置在非线性元件上方的第一反射镜叠层,该第二反射镜叠层组件能够响应于基本波长的电磁辐射而以基本波长的谐波发射电磁辐射。将电极施加到第二反射镜叠层和基板上,以在不穿过非线性元件的情况下将电流电泵送到增益区域。可以在第二反射镜堆叠中设置导电层,并且可以在第二反射镜堆叠中围绕增益区域形成环形电流限制区域,以帮助将电流引导到活性材料中。第二反射镜叠层和非线性元件内的增益区域相隔预定距离。第一反射镜堆被构造为反射基波波长的电磁辐射并且部分透射基波波长的谐波的电磁辐射。

著录项

  • 公开/公告号US5918108A

    专利类型

  • 公开/公告日1999-06-29

    原文格式PDF

  • 申请/专利权人 W. L. GORE & ASSOCIATES INC;

    申请/专利号US19970923131

  • 发明设计人 FRANK H. PETERS;

    申请日1997-09-04

  • 分类号H01L21/20;

  • 国家 US

  • 入库时间 2022-08-22 02:07:54

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号