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Investigating the structural and physical properties of hydrogenated amorphous carbon films fabricated by middle frequency pulsed unbalanced magnetron sputtering

机译:研究中频脉冲不平衡磁控溅射制备的氢化非晶碳膜的结构和物理性能

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摘要

Hydrogenated amorphous carbon (a-C:H) films were deposited by the middle frequency pulsed magnetron sputtering method using a graphite target in a mixed methane and argon plasma. The effects of substrate bias on the microstructure, surface morphology, mechanical, electrical and optical properties of the a-C:H films were investigated. It has been found that the sp~3 fraction in the a-C:H films increases with increasing substrate bias from 0 to 150 V. AFM measurements show that the RMS surface roughness of the films decreases with increasing substrate bias from 0 to 150 V. The correlation between the sp~3 fraction and surface roughness of the a-C:H films is revealed, and the mechanism on it is suggested in this paper. Nanoindentation, electrical and optical measurements indicate that the nanohardness, electrical resistivity and optical band gap increase with increasing substrate bias from 0 to 150 V. The results above are useful for the practical application of a-C:H films.
机译:使用中频脉冲磁控溅射法,在石墨和甲烷,氩气等离子混合气体中,使用石墨靶沉积氢化非晶碳(a-C:H)膜。研究了基底偏压对a-C:H薄膜的微观结构,表面形态,机械,电学和光学性质的影响。已经发现,aC:H薄膜中的sp〜3分数随基材偏压从0到150 V的增加而增加。AFM测量表明,薄膜的RMS表面粗糙度随基材偏压从0到150 V的增加而降低。揭示了a〜C:H薄膜的sp〜3分数与表面粗糙度之间的相关性,并提出了其机理。纳米压痕,电学和光学测量表明,纳米硬度,电阻率和光学带隙随基底偏压从0到150 V的增加而增加。以上结果对于a-C:H膜的实际应用是有用的。

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