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首页> 外文期刊>Physica, B. Condensed Matter >Resonant tunneling in double-barrier structures under transverse magnetic field
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Resonant tunneling in double-barrier structures under transverse magnetic field

机译:横向磁场下双势垒结构的共振隧穿

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摘要

We showed in this paper that the magnetic vector potential profile taken in previous publications is inappropriate; it introduced an artifact δ-function magnetic field at the boundary as to B→= ?×A→. According to electrodynamics theory, the magnetic vector should be continuous at every boundary. Using magnetic vector potential continuous boundary condition, we found that the improvement for the resonant lifetime is as high as ~18% and ~20% for resonant transmission probability at 20 T in an Al_(0.8)Ga_(0.2)As (30 ?)/GaAs (60 ?) double-barrier structure.
机译:我们在本文中表明,先前出版物中得出的矢量磁势分布是不合适的。在边界处引入了B→=?×A→的伪造的δ函数磁场。根据电动力学理论,磁矢量在每个边界处应该是连续的。利用磁矢量势连续边界条件,我们发现在Al_(0.8)Ga_(0.2)As(30?)下,在20 T下的共振传输概率,共振寿命的改善高达〜18%和〜20%。 / GaAs(60?)双势垒结构。

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