Resonant tunneling of holes in double-barrier structures in the presence of an in-plane magnetic field

摘要

Using the asymptotic transfer-matrix method, we investigate me resonant tunneling of holes in double-barrier semiconductor structures in the presence of an in-plane magnetic field. The transmission coefficients including ll (light to light hole), hl (light to heavy hole), hh (heavy to heavy hole), and lh (heavy to light hote) are calculated as a function of energy. As in the case of nonzero parallel wave vectors, the mixing of note tunneling can also occur due to the in-plane magnetic field. Moreover, as has been observed by resonant magnetotunneling spectroscopy, we also find that the different resonances have quite different magnetic-field dependences. © 1996 American Institute of Physics.