Electron spectrum of δ-doped quantum wells by the ThomasFermi method at finite temperatures

摘要

The electron spectrum of δ-doped quantum wells in n-GaAs is investigated by means of the ThomasFermi (TF) method at finite temperatures. This method shows rapid convergence and good accuracy. Under two-dimensional (2D) doping concentrations 10~(13)...2×10~(13) cm ~(-2), the simplest TF method (T=0 K) can be used to calculate the profiles of the potential well up to T≈200 K. The simplest TF method yields correct results for the electron concentrations and the differences of the electron energy sublevels in the quantum well up to room temperature (T～300 K).