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首页> 外文期刊>Physica, B. Condensed Matter >Morphological and stoichiometric study of chemical bath deposited CdS films by varying ammonia concentration
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Morphological and stoichiometric study of chemical bath deposited CdS films by varying ammonia concentration

机译:改变氨水浓度对化学浴沉积CdS薄膜的形貌和化学计量的研究

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The influence of ammonia concentration on stoichiometric, surface morphological, and optical properties of chemical bath deposited cadmium sulphide thin films has been studied systemically. Chemical bath deposition (CBD) of CdS thin films was carried out via using cadmium acetate as the cadmium ion source, thiourea as the sulphur source and ammonia as the complexing agent. Ammonia concentration was changed from 0 to 2.5 M. At ammonia concentration greater than or equal to 0.1 M and lower than 0.6 M, nanowires or flake-like structures were obtained. At ammonia concentration ranging from 0.8 to 2.0 M, uniform, dense, and continuously coated films were obtained. The energy dispersive X-ray spectroscopy (EDXS) analysis revealed that as the ammonia concentration changed from 0.1 to 2.0 M, the Cd/S ratio in the obtained film increased from 0.24 to 2.61. Not only typical cadmium-poor but also unusual sulphur deficiency phenomena were observed for CBD CdS thin films. The films deposited with ammonia concentration of 1.0 M show the highest degree of crystallinity and closest stoichiometry Cd/S?1, and have a preferred orientation. The direct band energy gaps of as-grown films were found to be 2.23-2.77 eV. The formation mechanism of the films with various morphologies and cadmium and sulphur deficiencies are discussed.
机译:已经系统地研究了氨浓度对化学浴沉积的硫化镉薄膜的化学计量,表面形态和光学性质的影响。以乙酸镉为镉离子源,硫脲为硫源,氨为络合剂,对CdS薄膜进行化学浴沉积(CBD)。氨浓度从0更改为2.5M。在氨浓度大于或等于0.1 M且小于0.6 M时,获得纳米线或片状结构。在氨浓度为0.8至2.0 M的范围内,可获得均匀,致密和连续涂覆的薄膜。能量色散X射线光谱法(EDXS)分析表明,随着氨浓度从0.1M变化到2.0M,所得膜中的Cd / S比从0.24增加到2.61。对于CBD CdS薄膜,不仅观察到典型的贫镉现象,而且观察到异常的硫缺乏现象。以1.0M的氨浓度沉积的膜表现出最高的结晶度和最接近的化学计量Cd /Sφ1,并具有优选的取向。发现成膜的直接能带隙为2.23-2.77 eV。讨论了各种形貌和镉,硫缺乏的薄膜的形成机理。

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