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首页> 外文期刊>Physica, B. Condensed Matter >Growth and characterization of pure and potassium iodide-doped zinc tris-thiourea sulphate (ZTS) single crystals
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Growth and characterization of pure and potassium iodide-doped zinc tris-thiourea sulphate (ZTS) single crystals

机译:纯和碘化钾掺杂的三硫脲硫酸锌(ZTS)单晶的生长和表征

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摘要

Single crystals of pure and potassium iodide (KI)-doped zinc tris-thiourea sulphate (ZTS) were grown from aqueous solutions by the slow evaporation method. The grown crystals were transparent. The lattice parameters of the grown crystals were determined by the single-crystal X-ray diffraction technique. The grown crystals were also characterized by recording the powder X-ray diffraction pattern and by identifying the diffracting planes. The FT-IR spectrum was recorded in the range 400-4500 cm(-1). Second harmonic generation (SHG) was confirmed by the Kurtz powder method. The thermo gravimetric analysis (TGA) and differential thermal analysis (DTA) studies reveal that the materials have good thermal stability. Atomic absorption studies confirm the presence of dopant in ZTS crystals. The electrical measurements were made in the frequency range 10(2)-10(6) Hz and in the temperature range 40-130 degrees C along a-, b- and c-directions of the grown crystals. The present study shows that the electrical parameters viz. dc conductivity, dielectric constant, dielectric loss factor and ac conductivity increase with increase in temperature. Activation energy values were also determined for the ac conduction process in grown crystals. The dc conductivity, dielectric constant, dielectric loss factor and ac conductivity of KI-doped US crystal were found to be more than those of pure US crystals.
机译:通过缓慢蒸发法从水溶液中生长出纯净的碘化钾(KI)和碘化钾(KI)掺杂的三硫代脲脲酸锌(ZTS)晶体。生长的晶体是透明的。通过单晶X射线衍射技术确定生长晶体的晶格参数。还通过记录粉末X射线衍射图并鉴定衍射面来表征生长的晶体。 FT-IR光谱记录在400-4500 cm(-1)范围内。通过库尔兹粉末法确认了二次谐波(SHG)的产生。热重分析(TGA)和差热分析(​​DTA)研究表明,该材料具有良好的热稳定性。原子吸收研究证实ZTS晶体中存在掺杂剂。沿生长晶体的a,b和c方向在10(2)-10(6)Hz的频率范围和40-130摄氏度的温度范围内进行电测量。本研究表明,电气参数即。直流电导率,介电常数,介电损耗因子和交流电导率随温度的升高而增加。还确定了生长晶体中交流传导过程的活化能值。发现掺杂KI的美国晶体的直流电导率,介电常数,介电损耗因子和交流电导率比纯美国晶体的要高。

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