Investigation of the effects of porous layer on the electrical properties of Pt-GaN Schottky contacts

摘要

This article reports the effects of porosity on the enhancement of the Schottky barrier height (SBH) and reduction of the leakage current of Pt Schottky diode based on n-type GaN. The porous GaN layer in this work was generated by electroless chemical etching under UV illumination. For comparative study, two additional samples, i.e. one as-grown sample and one thermally treated sample, were also prepared. The structural studies showed that the porous GaN sample has a relatively rough surface morphology with slightly broader X-ray diffraction peak of the (0 0 0 2) plane. The current–voltage (I–V) measurements revealed that the electrical characteristics of the Pt Schottky diode were improved significantly by the presence of the porous layer, in which SBH was observed to be enhanced by 27%.