Growth of InGaN multiple quantum wells and GaN eplilayer on GaN substrate

摘要

We investigated that the surface morphology of GaN epilayers was significantly affected by the surface tilt orientation of GaN substrate. Surface morphologies of GaN epilayers on GaN substrates show three types: mirror, wavy, and hillock. These surface morphologies are dependent on the surface orientation of GaN substrates. It is found that the hillock morphology of GaN epilayer was formed on the GaN substrate with surface tilt orientation less than 0.1 degrees. As the surface tilt angle increased to 0.35 degrees, the surface morphology varied from hillock to wavy morphology. Above a surface tilt angle of 0.4 degrees, surface morphology changed to the mirror-like type morphology. Additionally, these three types of GaN surface morphology also affected the optical quality of GaN epilayers as well as InGaN multiple quantum wells on GaN substrates by non-uniform In incorporation on the different surface morphologies of GaN epilayers. (c) 2005 Elsevier B.V. All rights reserved.