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首页> 外文期刊>Physica, B. Condensed Matter >Parameters-dependent third-order nonlinear optical susceptibility for quadratic electro-optic effect in GaN/InGaN multiple quantum wells
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Parameters-dependent third-order nonlinear optical susceptibility for quadratic electro-optic effect in GaN/InGaN multiple quantum wells

机译:GaN / InGaN多量子阱中二次电光效应的参数相关的三阶非线性光学磁化率

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摘要

Including the contribution of spin-orbit splitting, the wave functions and energy structures of GaN/InxGa1-xN multiple quantum wells (MQWs) have been calculated. For the transition between valence band and conduction band, the third-order nonlinear optical susceptibility chi((3)) of quadratic electro-optic effect (QEOE) for the mode whose polarization is vertical to the [0 0 1] direction of the MQWs, has been calculated. The correlations between chi((3)) and the width of the MQWs, and the concentration of In, are obtained. (c) 2007 Elsevier B.V. All rights reserved.
机译:包括自旋轨道分裂的贡献在内,已计算出GaN / InxGa1-xN多量子阱(MQW)的波函数和能量结构。对于价带和导带之间的过渡,极化垂直于MQW的[0 0 1]方向的模式的二次电光效应(QEOE)的三阶非线性光学磁化率chi((3)) ,已计算。获得了chi((3))与MQW的宽度以及In的浓度之间的相关性。 (c)2007 Elsevier B.V.保留所有权利。

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