A proposal for complete interband absorption in indirect semiconductors

摘要

Based on the absorption nature of semiconductors, we propose an improved approach, together with the normal intrinsic And Urbach band tail transitions, for the completeness of interband absorption in indirect semiconductors. Behind this modification lies more meticulous analysis of the transitions where electrons are permitted to transit to both the parabolic band edge with a phonon absorbed and the band tail edge with a phonon emitted. The calculated transmissivity by this novel approach has turned out to be in much better agreement with the experimental results of silicon samples, which paves the way for preferable analysis of indirect semiconductors. (C) 2004 Elsevier B.V. All rights reserved.