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首页> 外文期刊>Physical chemistry chemical physics: PCCP >Spectral assignments in the infrared absorption region and anomalous thermal hysteresis in the interband electronic transition of vanadium dioxide films
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Spectral assignments in the infrared absorption region and anomalous thermal hysteresis in the interband electronic transition of vanadium dioxide films

机译:二氧化钒薄膜的带间电子跃迁中红外吸收区的光谱分配和异常热滞

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摘要

The metal-insulator transition (MIT) is of key importance for understanding the fundamental electronic interaction that determines the physical properties of vanadium dioxide (VO2) film. Here, the spectral slopes of transmittance and reflectance in the infrared absorption region (about 0.62-1.63 eV) and the interband electronic transitions for VO2 films with thicknesses of 27, 40 and 63 nm have been investigated. The potential applications of the spectral slopes were presented in detail. It is found that the variation of resistivity and transmittance increases with the spectral slopes of transmittance and reflectance. It is surprising that the resistivity of the VO2 film with a thickness of 27 nm is larger than that of the VO2 film with a thickness of 40 nm in the metal state. In addition, an anomalous counterclockwise thermal hysteresis with higher energy from the interband electronic transition was also found during the MIT process for the thinnest film. It is believed that this remarkable phenomenon could be related to the correlation effects in the rutile phase, which could lead to the splitting of the a(1g) band into Hubbard bands. The lower Hubbard band would result in an electronic transition blue-shift with the empty e(g)(sigma) band, which can explain the origin of the counterclockwise thermal hysteresis and the abnormal resistivity in the metal state.
机译:对于理解决定二氧化钒(VO2)薄膜物理特性的基本电子相互作用而言,金属-绝缘体转变(MIT)至关重要。在此,研究了厚度为27、40和63 nm的VO2薄膜在红外吸收区(约0.62-1.63 eV)的透射率和反射率的光谱斜率以及带间电子跃迁。详细介绍了频谱斜率的潜在应用。发现随着透射率和反射率的光谱斜率,电阻率和透射率的变化增加。令人惊讶的是,在金属状态下,厚度为27nm的VO 2膜的电阻率大于厚度为40nm的VO 2膜的电阻率。此外,在MIT过程中,对于最薄的薄膜,还发现了带外电子跃迁具有更高能量的逆时针热滞现象。据认为,这种显着现象可能与金红石相中的相关效应有关,这可能导致a(1g)谱带分裂为Hubbard谱带。较低的Hubbard带将导致电子跃迁蓝移,并带有空的e(g)sigma带,这可以解释逆时针热滞的起源以及金属状态下的异常电阻率。

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