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Chromium–niobium co-doped vanadium dioxide films: Large temperature coefficient of resistance and practically no thermal hysteresis of the metal–insulator transition

机译:铬铌共掺杂二氧化钒薄膜:电阻温度系数大,金属-绝缘体过渡几乎没有热滞

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摘要

We investigated the effects of chromium (Cr) and niobium(Nb) co-doping on the temperature coefficient of resistance (TCR) and the thermal hysteresis of the metal–insulator transition of vanadium dioxide (VO2) films. We determined the TCR and thermal-hysteresis-width diagram of the V1−x−yCrxNbyO2films by electrical-transport measurements and we found that the doping conditions x ≳ y and x + y ≥ 0.1 are appropriate for simultaneously realizing a large TCR value and an absence of thermal hysteresis in the films. By using these findings, we developed a V0.90Cr0.06Nb0.04O2filmgrown on a TiO2-buffered SiO2/Si substrate that showed practically no thermal hysteresis while retaining a large TCR of 11.9%/K. This study has potential applications in the development of VO2-based uncooled bolometers.
机译:我们研究了铬(Cr)和铌(Nb)共掺杂对二氧化钒(VO2)膜的电阻温度系数(TCR)和金属-绝缘体转变的热滞后的影响。我们通过电传输测量确定了V1-x-yCrxNbyO2薄膜的TCR和热滞后宽度图,我们发现掺杂条件x y和x + y≥0.1适用于同时实现大的TCR值和膜中没有热滞现象。利用这些发现,我们开发了在TiO2缓冲的SiO2 / Si衬底上生长的V0.90Cr0.06Nb0.04O2膜,该膜几乎没有热滞,同时保留了11.9%/ K的大TCR。这项研究在基于VO2的非冷却辐射热计的开发中具有潜在的应用。

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