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Magnetism tuned by the charge states of defects in bulk C-doped SnO2 materials

机译:掺杂C的SnO2块体材料中的缺陷电荷状态对磁性的影响

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To analyze the controversial conclusions on the magnetism of C-doped SnO2 (SnO2:C) bulk materials between theoretical calculations and experimental observations, we propose the critical role of the charge states of defects in the geometric structures and magnetism, and carry out a series of first principle calculations. By changing the charge states, we can influence Bader charge distributions and atomic orbital occupancies in bulk SnO2:C systems, which consequently conduct magnetism. In all charged SnO2:C supercells, C-2p(x)/p(y)/p(z) electron occupancies are significantly changed by the charge self-regulation, and thus they make the C-2p orbitals spin polarized, which contribute to the dominant magnetic moment of the system. When the concentration of C dopant in the SnO2 supercell increases, the charge redistribution assigns extra electrons averagely to each dopant, and thus effectively modulates the magnetism. These findings provide an experimentally viable way for controlling the magnetism in these systems.
机译:为了在理论计算和实验观察之间分析C掺杂SnO2(SnO2:C)块状材料的磁性的有争议的结论,我们提出了缺陷电荷态在几何结构和磁性中的关键作用,并进行了一系列研究。第一原理计算。通过更改电荷状态,我们可以影响块状SnO2:C系统中的Bader电荷分布和原子轨道占有率,从而传导磁性。在所有带电的SnO2:C超级电池中,C-2p(x)/ p(y)/ p(z)电子占有率通过电荷自调节而显着改变,因此它们使C-2p轨道自旋极化,这有助于到系统的主要磁矩。当SnO2超级电池中C掺杂剂的浓度增加时,电荷的重新分布平均将多余的电子分配给每种掺杂剂,从而有效地调节了磁性。这些发现为控制这些系统中的磁性提供了实验上可行的方法。

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