Highly uniform growth of monolayer graphene by chemical vapor deposition on Cu-Ag alloy catalysts

摘要

One of the major challenges for the practical application of graphene is the large scale synthesis of uniform films with high quality at lower temperature. Here, we demonstrate the use of Ag-plated Cu substrates in the synthesis of high-quality graphene films via chemical vapor deposition (CVD) of methane gas at temperatures as low as 900 °C. Various experimental analyses show that the plated Ag diffuses into Cu to form a uniform Cu-Ag alloy that suppresses the formation of multilayer nucleation and decreases the activation energy of precursor formation, leading to a lower synthesis temperature with enhanced monolayer coverage. In addition, we also observed an unusual Ag-assisted abnormal grain growth of Cu into the cube texture with larger grain sizes and reduced grain boundaries, which is believed to provide the homogeneous environment needed for uniform graphene growth.