机译:介电基材上均匀石墨烯单层的主要成核统治化学气相沉积生长
Chinese Acad Sci Beijing Natl Lab Mol Sci CAS Res Educ Ctr Excellence Mol Sci Inst Chem Beijing 100190 Peoples R China|Univ Chinese Acad Sci Sch Chem Sci Beijing 100049 Peoples R China;
Chinese Acad Sci Beijing Natl Lab Mol Sci CAS Res Educ Ctr Excellence Mol Sci Inst Chem Beijing 100190 Peoples R China|Univ Chinese Acad Sci Sch Chem Sci Beijing 100049 Peoples R China;
Chinese Acad Sci Beijing Key Lab Ion Liquids Clean Proc Inst Proc Engn Beijing 100190 Peoples R China;
Chinese Acad Sci Beijing Natl Lab Mol Sci CAS Res Educ Ctr Excellence Mol Sci Inst Chem Beijing 100190 Peoples R China|Univ Chinese Acad Sci Sch Chem Sci Beijing 100049 Peoples R China;
Chinese Acad Sci Beijing Natl Lab Mol Sci CAS Res Educ Ctr Excellence Mol Sci Inst Chem Beijing 100190 Peoples R China|Univ Chinese Acad Sci Sch Chem Sci Beijing 100049 Peoples R China;
Univ Sci & Technol Beijing Sch Mat Sci & Engn Beijing 100083 Peoples R China;
Tsinghua Univ Dept Engn Mech Appl Mech Lab Beijing 100084 Peoples R China|Tsinghua Univ Ctr Nano & Micro Mech Beijing 100084 Peoples R China;
Chinese Acad Sci Beijing Natl Lab Mol Sci CAS Res Educ Ctr Excellence Mol Sci Inst Chem Beijing 100190 Peoples R China|Univ Chinese Acad Sci Sch Chem Sci Beijing 100049 Peoples R China;
机译:介电基底上均匀石墨烯单层的主要成核为主的化学气相沉积生长
机译:通过化学气相沉积,通过铜箔基板的纹理和形态控制,显着提高了石墨烯单层的厚度均匀性
机译:通过在Cu-Ag合金催化剂上化学气相沉积实现单层石墨烯的高度均匀生长
机译:通过化学气相沉积路线简单地在介电基板上合成大面积多层石墨烯膜(通过CVD路线在介电基板上合成MLG膜)
机译:通过化学气相沉积法在透明基板上低温直接生长石墨烯薄膜。
机译:通过化学气相沉积在铜上可控制地将石墨烯从毫米大小的单层生长到多层
机译:通过化学气相沉积途径简单地合成介电基板上的大面积多层石墨烯薄膜(通过CVD途径合成介电基板上的MLG薄膜)