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Synthesis and characterization of 1,3,2-diazaboroine derivatives for organic thin-film transistor applications

机译:用于有机薄膜晶体管的1,3,2-二氮杂硼烷衍生物的合成与表征

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摘要

2,2′-(1,4-Phenylene)bis(2,3-dihydro-1H-naphtho[1,8-de]-1,3,2-diazaboroine) [PND] and 2,2′-(4,4′-biphenylene)bis(2,3-dihydro-1H-naphtho[1,8-de]-1,3,2-diazaboroine) [BND] were synthesized and characterized by using differential scanning calorimetry (DSC) measurements, single crystal X-ray structure analysis, UV–vis absorption and electrochemical measurements, thin-film X-ray diffraction (XRD) and AFM studies. Organic field-effect transistors (OFETs) were fabricated by vacuum deposition with a bottom contact geometry using Au electrodes. Annealing treatment optimizes the organic active layer and increases the charge carrier mobility. Field-effect mobilities of 7.2×10~(-3) for PND and 4.1×10~(-4) cm~2 V~(-1) s~(-1) for BND were found.
机译:2,2'-(1,4-亚苯基)双(2,3-二氢-1H-萘并[1,8-de] -1,3,2-二氮杂硼烷)[PND]和2,2'-(4合成并通过差示扫描量热法(DSC)测定了4,-联苯撑)双(2,3-二氢-1H-萘并[1,8-de] -1,3,2-二氮杂硼烷)[BND]的特性,单晶X射线结构分析,紫外可见吸收和电化学测量,薄膜X射线衍射(XRD)和AFM研究。有机场效应晶体管(OFET)是通过使用Au电极以底部接触几何形状进行真空沉积而制成的。退火处理优化了有机活性层并增加了载流子迁移率。发现PND的场效应迁移率为7.2×10〜(-3),BND的场效应迁移率为4.1×10〜(-4)cm〜2 V〜(-1)s〜(-1)。

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