【24h】

Vertical coupling characteristics between hybrid plasmonic slot waveguide and Si waveguide

机译:混合等离子体激元缝隙波导与硅波导的垂直耦合特性

获取原文
获取原文并翻译 | 示例
           

摘要

For development of complementary metal-oxide-semiconductor (CMOS)-compatible integrated optical circuits, vertical directional coupling between a hybrid plasmonic slot waveguide and a Si waveguide is theoretically investigated in detail. To determine the vertical separation gap and efficient coupling length, we investigate the characteristics of the even and odd supermodes at a wavelength of 1.55 (mu)m. The vertical coupler transfers 90percent of the power carried by the Si waveguide to the hybrid plasmonic slot waveguide after normalizing to reference waveguides when the gap is 60 nm and the coupling length is 2.6 (mu)m. Because of the lossy hybrid guided mode in the plasmonic waveguide, the transmitted power exhibits damped sinusoidal behavior depending on the overlapping length. The proposed vertical coupler shows more efficient light coupling between a dielectric and plasmonic waveguide in comparison to the other types of hybrid coupler, and can be exploited further for on-chip integrated opto-electronic circuits.
机译:为了开发互补金属氧化物半导体(CMOS)兼容的集成光学电路,理论上详细研究了混合等离子体激元缝隙波导和Si波导之间的垂直方向耦合。为了确定垂直分离间隙和有效耦合长度,我们研究了波长为1.55μm的偶数和奇数超模的特性。当间隙为60 nm,耦合长度为2.6μm时,垂直耦合器将参考波导归一化后,将Si波导传输的功率的90%传递到混合等离子体激元缝隙波导。由于等离子波导管中的有损混合导模,传输功率根据重叠长度表现出阻尼正弦特性。与其他类型的混合耦合器相比,提出的垂直耦合器在介电和等离子体波导之间显示出更有效的光耦合,并且可以进一步用于片上集成光电电路。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号