Electroosmotic flow control in microfluidic chips using a self-assembled monolayer as the insulator of a flow field-effect transistor

摘要

A novel concept for electroosmotic flow (EOF) control in a microfluidic chip is presented by using a self-assembled monolayer as the insulator of a flow field-effect transistor. Bidirectional EOF control with mobility values of 3.4 ±10 ~(-4) and ~3.1 ±10 ~(-4) cm ~2/V s can be attained, corresponding to the applied gate voltage at -*0.8 and 0.8 V, respectively, without the addition of buffer additives. A relatively high control factor (approximately 400 ± 10 ~(-6) cm 2/V ~2 s) can be obtained. The method presented in this study offers a simple strategy to control the EOF.