...
首页> 外文期刊>Nanotechnology >Selective growth of ZnO nanorods on hydrophobic Si nanorod arrays
【24h】

Selective growth of ZnO nanorods on hydrophobic Si nanorod arrays

机译:疏水性Si纳米棒阵列上ZnO纳米棒的选择性生长

获取原文
获取原文并翻译 | 示例

摘要

In this paper we describe the selective growth of ZnO nanorods (NRs) on top of hydrophobic Si NR arrays. The periodic Si NR arrays, prepared through electroless chemical etching and HF treatment, functioned as hydrophobic substrates. Droplets containing ZnO seeds could be positioned on the Si NR arrays, causing the ZnO seeds to deposit selectively upon them, with n-ZnO NR/p-Si NR array heterojunctions ultimately forming after hydrothermal growth of ZnO NRs. Because of compensation for the difference in refractive index between air and the Si substrate, the n-ZnO NR/p-Si NR arrays exhibited excellent absorption ability in the visible range. Devices based on these n-ZnO NR/p-Si NR array heterojunctions displayed not only rectifying behavior but also photovoltaic effects when illuminated with UV light. The low temperature and low cost of this fabrication process suggest that the selective growth of n-ZnO NRs on p-Si NR arrays might allow such structures to have diverse applications in optoelectronics.
机译:在本文中,我们描述了在疏水Si NR阵列上方选择性生长ZnO纳米棒(NRs)。通过化学化学刻蚀和HF处理制备的周期性Si NR阵列用作疏水性基底。可以将包含ZnO晶种的液滴放置在Si NR阵列上,从而使ZnO晶种选择性地沉积在其上,并在ZnO NR水热生长后最终形成n-ZnO NR / p-Si NR阵列异质结。由于补偿了空气和Si衬底之间折射率的差异,n-ZnO NR / p-Si NR阵列在可见光范围内表现出出色的吸收能力。基于这些n-ZnO NR / p-Si NR阵列异质结的器件在用紫外线照射时不仅显示出整流性能,而且还显示出光伏效应。该制造过程的低温和低成本表明,在p-Si NR阵列上n-ZnO NR的选择性生长可能使此类结构在光电子学中具有多种应用。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号