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Effects of nanoscale surface roughness on the resistivity of ultrathin epitaxial copper films

机译:纳米级表面粗糙度对超薄外延铜膜电阻率的影响

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摘要

The knowledge on the influence of surface roughness and the electron-phonon (el-ph) interaction on electrical transport properties of nanoscale metal films is important from both fundamental and technological points of view. Here we report a study of the temperature dependent electron transport properties of nanoscale copper films by measuring temperature dependent electrical resistivity with thickness ranging from 4 to 500 nm. We show that the residual resistivity, which is temperature independent, can be described quantitatively using both measured vertical surface root-mean-square roughness and lateral correlation length in the nanoscale, with no adjustable parameter, by a recent quasi-classical model developed by Chatterjee and Meyerovich (2010 Phys. Rev. B 81 245409-10). We also demonstrate that the temperature dependent component of the resistivity can be described using the Bloch-Gruneisen equation with a thickness dependent el-ph coupling constant and a thickness dependent Debye temperature. We show that the increase of the el-ph coupling constant with the decrease of film thickness gives rise to an enhancement of the temperature dependent component of the resistivity.
机译:从基础和技术观点来看,关于表面粗糙度和电子-声子(el-ph)相互作用对纳米级金属膜的电传输性能的影响的知识都是重要的。在这里,我们通过测量厚度在4至500 nm范围内的温度依赖性电阻率来报告对纳米级铜膜的温度依赖性电子传输特性的研究。我们显示,通过使用Chatterjee开发的最近的准经典模型,可以使用测量的垂直表面均方根粗糙度和纳米级的横向相关长度(没有可调参数)来定量描述与温度无关的残余电阻率。和Meyerovich(2010 Phys.Rev.B 81 245409-10)。我们还证明,可以使用具有与厚度相关的el-ph耦合常数和与厚度相关的德拜温度的Bloch-Gruneisen方程来描述电阻率的温度相关分量。我们表明,随着薄膜厚度的减小,el-ph耦合常数的增加引起电阻率随温度变化的分量的增加。

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