DESIGN OF A 75-110-GHz MILLIMETER-WAVE 90-nm CMOS HIGHLY ISOLATED TRANSMITTER/RECEIVER SWITCH BY LEAKAGE-CANCELLATION TECHNIQUE

摘要

This article presents 75-110-GHz highly isolated T/R switch in 90nm CMOS. The proposed T/R switch circuit design is focused on highly isolation performance which is achieved by using both parallel inductors and leakage-cancellation techniques. To also reduce insertion loss which is also an important design key point, series-shunt single-pole double throw (SPDT) switch with optimizing transistors size and body-floating technique are adopted. From the experiment results, the designed switch has good performance of the return loss, insertion loss and isolation in W-band. Compared with some previously reported works, the designed switch has the best isolation performance of 48 dB at 94-GHz, and IP1dB is >9dBm, respectively. (C) 2016 Wiley Periodicals, Inc.