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首页> 外文期刊>Electrochimica Acta >Investigation of TiO2 nanotubesanoparticles stacking sequences to improve power conversion efficiency of dye-sensitized solar cells
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Investigation of TiO2 nanotubesanoparticles stacking sequences to improve power conversion efficiency of dye-sensitized solar cells

机译:TiO2纳米管/纳米粒子堆叠顺序研究以提高染料敏化太阳能电池的功率转换效率

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In this study, dye-sensitized solar cells (DSSCs) were fabricated using a hybrid photoanode with freestanding TiO2 nanotube (TN) membranes and TiO2 nanoparticles (TPs). To form the hybrid structures, up to 20 layers of TPs were screen-printed on to fluorine-doped tin oxide (FTO) glass, and the TNs, which were grown separately, were placed on top of the TPs. To investigate the effects of TNs on the energy conversion efficiency of these cells, TNs were placed on and sandwiched between TPs. Vertically oriented and smooth TN surfaces were obtained using a two-step anodization process. To obtain crystallized TNs, heat treatment was performed and anatase crystal structure was confirmed with XRD. For the anodized-TN- based solar cells, incident light was scattered by the three-dimensional topography at the bottom of the highly ordered TNs. This effect increased the optical path length in the photoanode, which allowed more light to be recycled by the dye molecules for additional photocurrent generation. This process also yielded a significantly higher power conversion efficiency (7.0%) than other geometries of photoanodes, which was further increased to 7.5% and charge transfer resistance decreased 14.5 Omega to 5.51 Omega when the TNs were sandwiched between the TPs, which was analyzed by EIS simulation. (C)2015 Elsevier Ltd. All rights reserved.
机译:在这项研究中,使用具有独立式TiO2纳米管(TN)膜和TiO2纳米粒子(TPs)的混合光阳极制造染料敏化太阳能电池(DSSC)。为了形成混合结构,将多达20层TP丝网印刷到掺氟氧化锡(FTO)玻璃上,并将分别生长的TN放置在TP的顶部。为了研究TN对这些细胞能量转换效率的影响,将TN放置在TP上并夹在TP之间。使用两步阳极氧化工艺可获得垂直取向且光滑的TN表面。为了获得结晶的TN,进行热处理,并通过XRD确认锐钛矿的晶体结构。对于基于阳极化TN的太阳能电池,入射光被高度有序TN底部的三维形貌散射。这种效应增加了光电阳极中的光路长度,从而使更多的光被染料分子回收,从而产生了更多的光电流。此过程还产生了比其他几何形状的光电阳极更高的功率转换效率(7.0%),当TN夹在TP之间时,该效率进一步提高到7.5%,电荷转移电阻降低了14.5Ω至5.51Ω。 EIS模拟。 (C)2015 Elsevier Ltd.保留所有权利。

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