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Epitaxial growth of Ag2S film on cleaved surface of MgO(001)

机译:Ag2S薄膜在MgO(001)裂解面上的外延生长

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Epitaxial films of monoclinic Ag2S with various thicknesses were prepared on cleaved surfaces of MgO(001) by molecular beam epitaxy, The epitaxial relations of the films to the substrates were determined by X-ray diffractometry For thin films, there are three kinds of crystallites with (012), (-112), and (040) parallel to (001)(MgO). These are ail equivalent in the high-temperature cubic farm of Ag2S, corresponding to {110}. With respect to epitaxy within the substrate surface for the crystallites, the diagonal direction of the body-centered pseudocubic sulfur arrays of Ag2S, [100] and [201], are parallel to [100](MgO), which is due to the coincidence of lattice dimensions of the film and substrate, For thick films, the epitaxial relations are (-112)//(001)(MgO) and [421]//[010](MgO), or (012)//(001)(MgO) and [4, -2, 1]//[010](MgO). The epitaxy for thick films is restricted not only by the surface periodicity of the substrate but also by the existence of steps generated during cleaving. The textures of thick films observed by polarized microscopy confirm that the epitaxial growth of the thick films is restricted by the steps. (C) 2001 Academic Press. [References: 8]
机译:通过分子束外延在MgO(001)的劈裂表面上制备了各种厚度的单斜Ag2S外延膜,通过X射线衍射法确定了膜与基底的外延关系。对于薄膜,存在三种类型的微晶。 (012),(-112)和(040)与(001)(MgO)平行。这些在Ag2S的高温立方场中均等效,对应于{110}。关于微晶衬底表面内的外延,Ag2S的体心假立方硫阵列的对角线方向[100]和[201]平行于[100](MgO),这是由于重合膜和基板的晶格尺寸的关系,对于厚膜,外延关系为(-112)//(001)(MgO)和[421] // [010](MgO)或(012)//(001 )(MgO)和[4,-2,1] // [010](MgO)。厚膜的外延不仅受衬底表面周期性的限制,而且还受切割过程中产生的台阶的存在的限制。通过偏振显微镜观察到的厚膜的织构证实,厚膜的外延生长受到台阶的限制。 (C)2001学术出版社。 [参考:8]

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